SK Hynix HMA82GS6CJR8N-VK 16GB vs Hewlett-Packard 7EH64AA#ABC 8GB

总分

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

总分

Hewlett-Packard 7EH64AA#ABC 8GB

Hewlett-Packard 7EH64AA#ABC 8GB

差异规格评论

差异

SK Hynix HMA82GS6CJR8N-VK 16GB

需要考虑的原因
SK Hynix HMA82GS6CJR8N-VK 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 70

左右 49% 更低的延时
更快的写入速度，GB/s

10.1 8.4

测试中的平均数值

Hewlett-Packard 7EH64AA#ABC 8GB

需要考虑的原因
Hewlett-Packard 7EH64AA#ABC 8GB

报告一个错误

更快的读取速度，GB/s

15.8 15

测试中的平均数值

规格

完整的技术规格清单

SK Hynix HMA82GS6CJR8N-VK 16GB

Hewlett-Packard 7EH64AA#ABC 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

36 70
读取速度，GB/s

15.0 15.8
写入速度，GB/s

10.1 8.4
内存带宽，mbps

21300 21300

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-21300, 1.2V, CAS Supported: 13 14 15 16 17 18 19 20
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2657 1946

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

Kingston 9965516-430.A00G 16GB

Kingston 9965516-430.A00G 16GB

Gold Key Technology Co Ltd NMUD416E82-3000D 16GB

Gold Key Technology Co Ltd NMUD416E82-3000D 16GB

Crucial Technology CT8G4DFS824A.M8FH3 8GB

Crucial Technology CT8G4DFS824A.M8FH3 8GB

Crucial Technology CT8G4DFS824A.M8FH 8GB

Crucial Technology CT8G4DFS824A.M8FH 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Gloway International Co. Ltd. TYA4U2666D19161C 16GB

Gloway International Co. Ltd. TYA4U2666D19161C 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Kllisre 0000 8GB

Kllisre 0000 8GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

SK Hynix HMA851U6DJR6N-WM 4GB

SK Hynix HMA851U6DJR6N-WM 4GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

SK Hynix HMA82GU6CJR8N-XN 16GB

SK Hynix HMA82GU6CJR8N-XN 16GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Samsung M378A1K43BB2-CRC 8GB

Samsung M378A1K43BB2-CRC 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMAA2GS6AJR8N-XN 16GB

SK Hynix HMAA2GS6AJR8N-XN 16GB

Kingston HX426C16FB2/8-SP 8GB

Kingston HX426C16FB2/8-SP 8GB

Kingston KHYXPX-MIE 8GB

Kingston KHYXPX-MIE 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Micron Technology 16ATF4G64HZ-3G2E2 32GB

Micron Technology 16ATF4G64HZ-3G2E2 32GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Asgard VMA41UG-MEC1U2AW1 8GB

Asgard VMA41UG-MEC1U2AW1 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Crucial Technology BLS4G4D26BFSE.8FE 4GB

Crucial Technology BLS4G4D26BFSE.8FE 4GB