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SK Hynix HMA82GS6CJR8N-VK 16GB
Panram International Corporation W4U2666PS-8GC19 8GB

SK Hynix HMA82GS6CJR8N-VK 16GB vs Panram International Corporation W4U2666PS-8GC19 8GB

总分
star star star star star
SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

总分
star star star star star
Panram International Corporation W4U2666PS-8GC19 8GB

Panram International Corporation W4U2666PS-8GC19 8GB

差异 规格 评论

差异

SK Hynix HMA82GS6CJR8N-VK 16GB 需要考虑的原因
SK Hynix HMA82GS6CJR8N-VK 16GB
报告一个错误
  • 更快的写入速度，GB/s
    10.1 left arrow 8.7
    测试中的平均数值
Panram International Corporation W4U2666PS-8GC19 8GB 需要考虑的原因
Panram International Corporation W4U2666PS-8GC19 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 36
    左右 -64% 更低的延时
  • 更快的读取速度，GB/s
    16.1 left arrow 15
    测试中的平均数值

规格

完整的技术规格清单
SK Hynix HMA82GS6CJR8N-VK 16GB
Panram International Corporation W4U2666PS-8GC19 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 22
  • 读取速度，GB/s
    15.0 left arrow 16.1
  • 写入速度，GB/s
    10.1 left arrow 8.7
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2657 left arrow 2633

SK Hynix HMA82GS6CJR8N-VK 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB

Panram International Corporation W4U2666PS-8GC19 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Nanya Technology NT2GT64U8HD0BN-AD 2GB
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内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
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内存RAM
Kingston 99U5584-004.A00LF 4GB
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内存RAM
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Samsung M378B5773DH0-CH9 2GB
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内存RAM
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内存RAM
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Kingston 99U5429-007.A00LF 2GB
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内存RAM
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内存RAM
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内存RAM