SK Hynix HMAA1GS6CJR6N-XN 8GB vs A-DATA Technology DDR3 1600 2OZ 4GB

总分

SK Hynix HMAA1GS6CJR6N-XN 8GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

总分

A-DATA Technology DDR3 1600 2OZ 4GB

A-DATA Technology DDR3 1600 2OZ 4GB

差异规格评论

差异

SK Hynix HMAA1GS6CJR6N-XN 8GB

需要考虑的原因
SK Hynix HMAA1GS6CJR6N-XN 8GB

报告一个错误

更快的读取速度，GB/s

15.7 14.8

测试中的平均数值
更快的写入速度，GB/s

11.6 8.7

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2% 更高的带宽

A-DATA Technology DDR3 1600 2OZ 4GB

需要考虑的原因
A-DATA Technology DDR3 1600 2OZ 4GB

报告一个错误

低于PassMark测试中的延时，ns

34 54

左右 -59% 更低的延时

规格

完整的技术规格清单

SK Hynix HMAA1GS6CJR6N-XN 8GB

A-DATA Technology DDR3 1600 2OZ 4GB

主要特点

存储器类型

DDR4 DDR3
PassMark中的延时，ns

54 34
读取速度，GB/s

15.7 14.8
写入速度，GB/s

11.6 8.7
内存带宽，mbps

25600 12800

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2511 2338

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

G Skill Intl F4-2400C17-8GSXK 8GB

G Skill Intl F4-2400C17-8GSXK 8GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Kingmax Semiconductor GSLG42F-18---------- 8GB

Kingmax Semiconductor GSLG42F-18---------- 8GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology BLS16G4S240FSD.16FBR 16GB

Crucial Technology BLS16G4S240FSD.16FBR 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Gloway International (HK) STK4U2400D17082C 8GB

Gloway International (HK) STK4U2400D17082C 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Kingston 9965640-013.A01G 32GB

Kingston 9965640-013.A01G 32GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

Samsung M378A2G43AB3-CWE 16GB

Samsung M378A2G43AB3-CWE 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Kingston KTP9W1-MIE 16GB

Kingston KTP9W1-MIE 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Gloway International (HK) STKD4GAM2400-F 8GB

Gloway International (HK) STKD4GAM2400-F 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

G Skill Intl F4-3000C14-16GVK 16GB

G Skill Intl F4-3000C14-16GVK 16GB

Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

Micron Technology 18ASF2G72PDZ-2G6D1 16GB

Micron Technology 18ASF2G72PDZ-2G6D1 16GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

G Skill Intl F4-3200C14-8GTZSW 8GB

G Skill Intl F4-3200C14-8GTZSW 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

A-DATA Technology AO1P32NC8T1-BCSS 8GB

A-DATA Technology AO1P32NC8T1-BCSS 8GB