SK Hynix HMAA1GS6CJR6N-XN 8GB vs Lexar Co Limited LD4AU008G-H3200GST 8GB

总分

SK Hynix HMAA1GS6CJR6N-XN 8GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

总分

Lexar Co Limited LD4AU008G-H3200GST 8GB

Lexar Co Limited LD4AU008G-H3200GST 8GB

差异规格评论

差异

SK Hynix HMAA1GS6CJR6N-XN 8GB

需要考虑的原因
SK Hynix HMAA1GS6CJR6N-XN 8GB

报告一个错误

Lexar Co Limited LD4AU008G-H3200GST 8GB

需要考虑的原因
Lexar Co Limited LD4AU008G-H3200GST 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 54

左右 -59% 更低的延时
更快的读取速度，GB/s

19.9 15.7

测试中的平均数值
更快的写入速度，GB/s

13.9 11.6

测试中的平均数值

规格

完整的技术规格清单

SK Hynix HMAA1GS6CJR6N-XN 8GB

Lexar Co Limited LD4AU008G-H3200GST 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

54 34
读取速度，GB/s

15.7 19.9
写入速度，GB/s

11.6 13.9
内存带宽，mbps

25600 25600

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2511 3271

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Crucial Technology CT32G4DFD832A.M16FB 32GB

Crucial Technology CT32G4DFD832A.M16FB 32GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16G

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Apacer Technology 78.D2GG7.AU30B 16GB

Apacer Technology 78.D2GG7.AU30B 16GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Crucial Technology BLS16G4D26BFSB.16FBD 16GB

Crucial Technology BLS16G4D26BFSB.16FBD 16GB

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

SK Hynix HMA82GR7MFR4N-UH 16GB

SK Hynix HMA82GR7MFR4N-UH 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Mushkin 99[2/7/4]199[F/T] 8GB

Mushkin 99[2/7/4]199[F/T] 8GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

G Skill Intl F4-3200C16-16GTZKW 16GB

G Skill Intl F4-3200C16-16GTZKW 16GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Kingston KF3200C20S4/16GX 16GB

Kingston KF3200C20S4/16GX 16GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Transcend Information JM2666HLB-16G 16GB

Transcend Information JM2666HLB-16G 16GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Crucial Technology CT8G4DFS824A.C8FAD1 8GB

Crucial Technology CT8G4DFS824A.C8FAD1 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Micron Technology 16ATF2G64AZ-2G6B1 16GB

Micron Technology 16ATF2G64AZ-2G6B1 16GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

G Skill Intl F4-2400C14-4GRK 4GB

G Skill Intl F4-2400C14-4GRK 4GB