SK Hynix HMAA4GS6MJR8N-VK 32GB vs Samsung M471A1K43DB1-CTD 8GB

总分

SK Hynix HMAA4GS6MJR8N-VK 32GB

SK Hynix HMAA4GS6MJR8N-VK 32GB

总分

Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

差异规格评论

差异

SK Hynix HMAA4GS6MJR8N-VK 32GB

需要考虑的原因
SK Hynix HMAA4GS6MJR8N-VK 32GB

报告一个错误

Samsung M471A1K43DB1-CTD 8GB

需要考虑的原因
Samsung M471A1K43DB1-CTD 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 36

左右 -3% 更低的延时
更快的读取速度，GB/s

15.7 14.7

测试中的平均数值
更快的写入速度，GB/s

11.8 8.9

测试中的平均数值

规格

完整的技术规格清单

SK Hynix HMAA4GS6MJR8N-VK 32GB

Samsung M471A1K43DB1-CTD 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

36 35
读取速度，GB/s

14.7 15.7
写入速度，GB/s

8.9 11.8
内存带宽，mbps

21300 21300

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2588 2767

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF2G64HZ-2G6J1 16GB

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Corsair CM2X2048-6400C5DHX 2GB

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