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SK Hynix HMAA4GS6MJR8N-VK 32GB
Samsung M471A2K43EB1-CWE 16GB
比较
SK Hynix HMAA4GS6MJR8N-VK 32GB vs Samsung M471A2K43EB1-CWE 16GB
总分
SK Hynix HMAA4GS6MJR8N-VK 32GB
总分
Samsung M471A2K43EB1-CWE 16GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMAA4GS6MJR8N-VK 32GB
报告一个错误
低于PassMark测试中的延时,ns
36
55
左右 35% 更低的延时
需要考虑的原因
Samsung M471A2K43EB1-CWE 16GB
报告一个错误
更快的读取速度,GB/s
15.8
14.7
测试中的平均数值
更快的写入速度,GB/s
13.8
8.9
测试中的平均数值
更高的内存带宽,mbps
25600
21300
左右 1.2 更高的带宽
规格
完整的技术规格清单
SK Hynix HMAA4GS6MJR8N-VK 32GB
Samsung M471A2K43EB1-CWE 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
36
55
读取速度,GB/s
14.7
15.8
写入速度,GB/s
8.9
13.8
内存带宽,mbps
21300
25600
Other
描述
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2588
2701
SK Hynix HMAA4GS6MJR8N-VK 32GB RAM的比较
TwinMOS 8DHE3MN8-HATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M471A2K43EB1-CWE 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B5170FH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HMAA4GS6MJR8N-VK 32GB
Samsung M471A2K43EB1-CWE 16GB
SK Hynix HMT151R7TFR4C-H9 4GB
Crucial Technology CT16G4SFD824A.M16FA 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BLS16G4S26BFSD.16FD 16GB
Crucial Technology CT102464BF160B.C16 8GB
Kingston 9905624-033.A00G 8GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-2400C17-4GFX 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
G Skill Intl F4-3200C14-32GTRG 32GB
AMD R5S38G1601U2S 8GB
Crucial Technology CT8G4DFD8213.C16FDR2 8GB
Crucial Technology CT51264AC800.C16FC 4GB
A-DATA Technology AM2P32NC8W1-BCFS 8GB
Kingston 2GB-DDR2 800Mhz 2GB
SK Hynix HMA81GS6DJR8N-VK 8GB
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-2400C17-4GFX 4GB
Samsung M386B4G70DM0-CMA4 32GB
Golden Empire CL16-16-16 D4-3200 4GB
TwinMOS 8DHE3MN8-HATP 2GB
Patriot Memory (PDP Systems) PSD416G26662 16GB
Nanya Technology NT512T64U88B0BY-3C 512MB
V-Color Technology Inc. TC48G24S817 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-3600C18-8GTRG 8GB
报告一个错误
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Bug description
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