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SK Hynix HMT125S6TFR8C-G7 2GB
Patriot Memory (PDP Systems) PSD34G13332S 4GB

SK Hynix HMT125S6TFR8C-G7 2GB vs Patriot Memory (PDP Systems) PSD34G13332S 4GB

总分
star star star star star
SK Hynix HMT125S6TFR8C-G7 2GB

SK Hynix HMT125S6TFR8C-G7 2GB

总分
star star star star star
Patriot Memory (PDP Systems) PSD34G13332S 4GB

Patriot Memory (PDP Systems) PSD34G13332S 4GB

差异 规格 评论

差异

SK Hynix HMT125S6TFR8C-G7 2GB 需要考虑的原因
SK Hynix HMT125S6TFR8C-G7 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 36
    左右 19% 更低的延时
Patriot Memory (PDP Systems) PSD34G13332S 4GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD34G13332S 4GB
报告一个错误
  • 更快的读取速度，GB/s
    8.4 left arrow 6.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    5.9 left arrow 3.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    10600 left arrow 8500
    左右 1.25 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT125S6TFR8C-G7 2GB
Patriot Memory (PDP Systems) PSD34G13332S 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    29 left arrow 36
  • 读取速度，GB/s
    6.9 left arrow 8.4
  • 写入速度，GB/s
    3.8 left arrow 5.9
  • 内存带宽，mbps
    8500 left arrow 10600
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    865 left arrow 1435

SK Hynix HMT125S6TFR8C-G7 2GB RAM的比较

Samsung M471B5273CH0-YK0 4GB
Crucial Technology CT4G4DFS824A.C8FF 4GB

Patriot Memory (PDP Systems) PSD34G13332S 4GB RAM的比较

A-DATA Technology AD73I1C1674EV 4GB
Apacer Technology 76.C102G.D170B 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

SK Hynix HMT125S6TFR8C-G7 2GB
SK Hynix HMT125S6TFR8C-G7 2GB
Patriot Memory (PDP Systems) PSD34G13332S 4GB
Patriot Memory (PDP Systems) PSD34G13332S 4GB
内存RAM
Kingston 99U5471-050.A00LF 8GB
Kingston 99U5471-050.A00LF 8GB
Panram International Corporation D4N2666PS-16G 16GB
Panram International Corporation D4N2666PS-16G 16GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Kingston 9905702-006.A00G 8GB
Kingston 9905702-006.A00G 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
G Skill Intl F4-3200C14-8GTZN 8GB
G Skill Intl F4-3200C14-8GTZN 8GB
内存RAM
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
Micron Technology 18ASF1G72PDZ-2G3B1 8GB
Micron Technology 18ASF1G72PDZ-2G3B1 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Chun Well Technology Holding Limited MD4U1632160DCW 16GB
Chun Well Technology Holding Limited MD4U1632160DCW 16G
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BLS8G4D240FSB.16FBR2 8GB
Crucial Technology BLS8G4D240FSB.16FBR2 8GB
内存RAM
Elpida EBJ40UG8BBU0-GN-F 4GB
Elpida EBJ40UG8BBU0-GN-F 4GB
Chun Well Technology Holding Limited D4U1636144B 16GB
Chun Well Technology Holding Limited D4U1636144B 16GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
Samsung M47472K43DB1-CTD 16GB
Samsung M47472K43DB1-CTD 16GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Kingston KHX2133C14D4/4G 4GB
Kingston KHX2133C14D4/4G 4GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
G Skill Intl F4-3600C16-16GTRG 16GB
G Skill Intl F4-3600C16-16GTRG 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMD64GX4M4C3200C16 16GB
Corsair CMD64GX4M4C3200C16 16GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
G Skill Intl F4-3600C14-8GTRGB 8GB
G Skill Intl F4-3600C14-8GTRGB 8GB
内存RAM