SK Hynix HMT151R7TFR4C-H9 4GB vs Crucial Technology BL8G26C16S4B.8FD 8GB

总分

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

总分

Crucial Technology BL8G26C16S4B.8FD 8GB

Crucial Technology BL8G26C16S4B.8FD 8GB

差异规格评论

差异

SK Hynix HMT151R7TFR4C-H9 4GB

需要考虑的原因
SK Hynix HMT151R7TFR4C-H9 4GB

报告一个错误

Crucial Technology BL8G26C16S4B.8FD 8GB

需要考虑的原因
Crucial Technology BL8G26C16S4B.8FD 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 48

左右 -55% 更低的延时
更快的读取速度，GB/s

16.3 10.1

测试中的平均数值
更快的写入速度，GB/s

12.9 7.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT151R7TFR4C-H9 4GB

Crucial Technology BL8G26C16S4B.8FD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 31
读取速度，GB/s

10.1 16.3
写入速度，GB/s

7.0 12.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1955 3120

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMT151R7TFR4C-H9 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMD64GX4M8A2400C14 8GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Micron Technology 16ATF4G64AZ-2G6B1 32GB

Micron Technology 16ATF4G64AZ-2G6B1 32GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

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Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB

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Kingston KHX2800C14D4/8GX 8GB

Corsair CMSX8GX4M1A2666C18 8GB

Corsair CMSX8GX4M1A2666C18 8GB