SK Hynix HMT151R7TFR4C-H9 4GB vs Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

总分

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

总分

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

差异规格评论

差异

SK Hynix HMT151R7TFR4C-H9 4GB

需要考虑的原因
SK Hynix HMT151R7TFR4C-H9 4GB

报告一个错误

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

需要考虑的原因
Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 48

左右 -78% 更低的延时
更快的读取速度，GB/s

18.2 10.1

测试中的平均数值
更快的写入速度，GB/s

14.9 7.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT151R7TFR4C-H9 4GB

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 27
读取速度，GB/s

10.1 18.2
写入速度，GB/s

7.0 14.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1955 3510

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

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Samsung M378T5663QZ3-CF7 2GB

Corsair CMK32GX4M4A2666C16 8GB

Corsair CMK32GX4M4A2666C16 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

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G Skill Intl F4-2800C16-8GVG 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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G Skill Intl F4-3600C16-8GTRG 8GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

G Skill Intl F4-3600C16-16GVKC 16GB

G Skill Intl F4-3600C16-16GVKC 16GB