SK Hynix HMT151R7TFR4C-H9 4GB vs Samsung M471A2K43BB1-CTD 16GB

总分

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

总分

Samsung M471A2K43BB1-CTD 16GB

Samsung M471A2K43BB1-CTD 16GB

差异规格评论

差异

SK Hynix HMT151R7TFR4C-H9 4GB

需要考虑的原因
SK Hynix HMT151R7TFR4C-H9 4GB

报告一个错误

Samsung M471A2K43BB1-CTD 16GB

需要考虑的原因
Samsung M471A2K43BB1-CTD 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 48

左右 -109% 更低的延时
更快的读取速度，GB/s

17 10.1

测试中的平均数值
更快的写入速度，GB/s

14.7 7.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT151R7TFR4C-H9 4GB

Samsung M471A2K43BB1-CTD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 23
读取速度，GB/s

10.1 17.0
写入速度，GB/s

7.0 14.7
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1955 3156

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix GKE160UD102408-2400 16GB

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Crucial Technology BLS16G4S240FSD.16FAD 16GB

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Kingston HP698651-154-MCN 8GB

Kingston ACR26D4S9S8ME-8 8GB

Kingston ACR26D4S9S8ME-8 8GB

Samsung M393B1K70QB0-CK0 8GB

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G Skill Intl F4-4000C18-8GTZR 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Corsair CM4X4GF2400C16S2 4GB

Corsair CM4X4GF2400C16S2 4GB