SK Hynix HMT31GR7BFR4C-H9 8GB vs Corsair CMD16GX4M2K4133C19 8GB

总分

SK Hynix HMT31GR7BFR4C-H9 8GB

SK Hynix HMT31GR7BFR4C-H9 8GB

总分

Corsair CMD16GX4M2K4133C19 8GB

Corsair CMD16GX4M2K4133C19 8GB

差异规格评论

差异

SK Hynix HMT31GR7BFR4C-H9 8GB

需要考虑的原因
SK Hynix HMT31GR7BFR4C-H9 8GB

报告一个错误

Corsair CMD16GX4M2K4133C19 8GB

需要考虑的原因
Corsair CMD16GX4M2K4133C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 58

左右 -205% 更低的延时
更快的读取速度，GB/s

19.9 8.2

测试中的平均数值
更快的写入速度，GB/s

18.0 6.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT31GR7BFR4C-H9 8GB

Corsair CMD16GX4M2K4133C19 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

58 19
读取速度，GB/s

8.2 19.9
写入速度，GB/s

6.4 18.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1718 3691

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A1G43DB0-CPB 8GB

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Crucial Technology CT4G4DFS8266.M8FF 4GB

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Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Corsair CMR32GX4M2C3000C15 16GB

Corsair CMR32GX4M2C3000C15 16GB

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Samsung M393B1G70BH0-CK0 8GB

InnoDisk Corporation 16GB

InnoDisk Corporation 16GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMK128GX4M8X3600C18 16GB

Corsair CMK128GX4M8X3600C18 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

G Skill Intl F4-3200C16-16GVR 16GB

G Skill Intl F4-3200C16-16GVR 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston 9965600-012.A02G 16GB

Kingston 9965600-012.A02G 16GB