SK Hynix HMT31GR7BFR4C-H9 8GB vs Crucial Technology CT102464BF1339.C16 8GB

总分

SK Hynix HMT31GR7BFR4C-H9 8GB

SK Hynix HMT31GR7BFR4C-H9 8GB

总分

Crucial Technology CT102464BF1339.C16 8GB

Crucial Technology CT102464BF1339.C16 8GB

差异规格评论

差异

SK Hynix HMT31GR7BFR4C-H9 8GB

需要考虑的原因
SK Hynix HMT31GR7BFR4C-H9 8GB

报告一个错误

Crucial Technology CT102464BF1339.C16 8GB

需要考虑的原因
Crucial Technology CT102464BF1339.C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 58

左右 -100% 更低的延时
更快的读取速度，GB/s

12.2 8.2

测试中的平均数值
更快的写入速度，GB/s

8.2 6.4

测试中的平均数值

规格

完整的技术规格清单

SK Hynix HMT31GR7BFR4C-H9 8GB

Crucial Technology CT102464BF1339.C16 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

58 29
读取速度，GB/s

8.2 12.2
写入速度，GB/s

6.4 8.2
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

1718 2224

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hexon Technology Pte Ltd HEXON 1GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Kingston ACR256X64D3S1333C9 2GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Kingston 99U5734-014.A00G 16GB

Kingston 99U5734-014.A00G 16GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

G Skill Intl F4-3600C16-8GTRG 8GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Kingston 9905471-071.A00LF 8GB

Corsair CMK32GX4M4Z3200C16 8GB

Corsair CMK32GX4M4Z3200C16 8GB