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SK Hynix HMT31GR7CFR4C-PB 8GB
G Skill Intl F4-3466C16-16GTZ 16GB

SK Hynix HMT31GR7CFR4C-PB 8GB vs G Skill Intl F4-3466C16-16GTZ 16GB

总分
star star star star star
SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

总分
star star star star star
G Skill Intl F4-3466C16-16GTZ 16GB

G Skill Intl F4-3466C16-16GTZ 16GB

差异 规格 评论

差异

SK Hynix HMT31GR7CFR4C-PB 8GB 需要考虑的原因
SK Hynix HMT31GR7CFR4C-PB 8GB
报告一个错误
G Skill Intl F4-3466C16-16GTZ 16GB 需要考虑的原因
G Skill Intl F4-3466C16-16GTZ 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 51
    左右 -122% 更低的延时
  • 更快的读取速度，GB/s
    17.9 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.5 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT31GR7CFR4C-PB 8GB
G Skill Intl F4-3466C16-16GTZ 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 23
  • 读取速度，GB/s
    9.8 left arrow 17.9
  • 写入速度，GB/s
    8.2 left arrow 14.5
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2182 left arrow 3356

SK Hynix HMT31GR7CFR4C-PB 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMT31GR7CFR4C-PB 8GB
Corsair CMY8GX3M2A2666C10 4GB

G Skill Intl F4-3466C16-16GTZ 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-4266C17-16GTZRB 16GB
G Skill Intl F4-4266C17-16GTZRB 16GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
G Skill Intl F4-3466C16-8GTZKW 8GB
G Skill Intl F4-3466C16-8GTZKW 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Kingston KTD3KX-HYA 8GB
Kingston KTD3KX-HYA 8GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Gloway International (HK) STKD4GAM2133-F 8GB
Gloway International (HK) STKD4GAM2133-F 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2400C15-4GIS 4GB
G Skill Intl F4-2400C15-4GIS 4GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMW128GX4M8C3200C16 16GB
Corsair CMW128GX4M8C3200C16 16GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Corsair CMG16GX4M2D3600C18 8GB
Corsair CMG16GX4M2D3600C18 8GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
G Skill Intl F4-3466C16-16GTZ 16GB
G Skill Intl F4-3466C16-16GTZ 16GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-3300C16-16GTZ 16GB
G Skill Intl F4-3300C16-16GTZ 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology BLS16G4S240FSD.16FBD 16GB
Crucial Technology BLS16G4S240FSD.16FBD 16GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Crucial Technology BLT8G4D30AETA.K16FE 8GB
Crucial Technology BLT8G4D30AETA.K16FE 8GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Kingston 9905734-018.A00G 16GB
Kingston 9905734-018.A00G 16GB
内存RAM