SK Hynix HMT31GR7CFR4C-PB 8GB vs Golden Empire CL17-17-17 D4-2400 16GB

总分

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

总分

Golden Empire CL17-17-17 D4-2400 16GB

Golden Empire CL17-17-17 D4-2400 16GB

差异规格评论

差异

SK Hynix HMT31GR7CFR4C-PB 8GB

需要考虑的原因
SK Hynix HMT31GR7CFR4C-PB 8GB

报告一个错误

Golden Empire CL17-17-17 D4-2400 16GB

需要考虑的原因
Golden Empire CL17-17-17 D4-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 51

左右 -70% 更低的延时
更快的读取速度，GB/s

16.5 9.8

测试中的平均数值
更快的写入速度，GB/s

11.2 8.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT31GR7CFR4C-PB 8GB

Golden Empire CL17-17-17 D4-2400 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 30
读取速度，GB/s

9.8 16.5
写入速度，GB/s

8.2 11.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2182 2951

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Ramos Technology EWB8GB681CA3-16IC 8GB

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Corsair CMR64GX4M4C3466C16 16GB

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Micron Technology 8JSF25664HZ-1G4D1 2GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Samsung M393B1G70BH0-CK0 8GB

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Samsung M3 91T2953GZ3-CF7 1GB

Samsung M3 91T2953GZ3-CF7 1GB

Samsung M3 78T2953GZ3-CF7 1GB

Samsung M3 78T2953GZ3-CF7 1GB