SK Hynix HMT31GR7CFR4C-PB 8GB vs Kingston HP26D4U6S8ME-8X 8GB

总分

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

总分

Kingston HP26D4U6S8ME-8X 8GB

Kingston HP26D4U6S8ME-8X 8GB

差异规格评论

差异

SK Hynix HMT31GR7CFR4C-PB 8GB

需要考虑的原因
SK Hynix HMT31GR7CFR4C-PB 8GB

报告一个错误

Kingston HP26D4U6S8ME-8X 8GB

需要考虑的原因
Kingston HP26D4U6S8ME-8X 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 51

左右 -104% 更低的延时
更快的读取速度，GB/s

17.6 9.8

测试中的平均数值
更快的写入速度，GB/s

14.0 8.2

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT31GR7CFR4C-PB 8GB

Kingston HP26D4U6S8ME-8X 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 25
读取速度，GB/s

9.8 17.6
写入速度，GB/s

8.2 14.0
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2182 3297

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378T5663QZ3-CF7 2GB

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Colorful Technology Ltd BAPC08G2666D4S8 8GB

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Wilk Elektronik S.A. GR3200D464L22S/16G 16GB

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Kingston KVR800D2N6/2G 2GB

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Samsung M471B5273EB0-CK0 4GB

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Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

SK Hynix HMA82GS6AFRFR-UH 16GB

SK Hynix HMA82GS6AFRFR-UH 16GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Virtium Technology Inc. VL33A1G63F-N6S 8GB

Virtium Technology Inc. VL33A1G63F-N6S 8GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Corsair CMW128GX4M4D3600C18 32GB

Corsair CMW128GX4M4D3600C18 32GB

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SK Hynix HYMP112U64CP8-S5 1GB

Kingston X2YH1K-MIE-NX 16GB

Kingston X2YH1K-MIE-NX 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M471A5143EB1-CRC 4GB

Samsung M471A5143EB1-CRC 4GB