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Samsung M471B5273EB0-CK0 4GB
Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB

Samsung M471B5273EB0-CK0 4GB vs Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB

总分
star star star star star
Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

总分
star star star star star
Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB

Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB

差异 规格 评论

差异

Samsung M471B5273EB0-CK0 4GB 需要考虑的原因
Samsung M471B5273EB0-CK0 4GB
报告一个错误
Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB 需要考虑的原因
Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 40
    左右 -11% 更低的延时
  • 更快的读取速度，GB/s
    19.4 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.9 left arrow 8.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273EB0-CK0 4GB
Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 36
  • 读取速度，GB/s
    12.3 left arrow 19.4
  • 写入速度，GB/s
    8.9 left arrow 13.9
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1789 left arrow 3351

Samsung M471B5273EB0-CK0 4GB RAM的比较

A-DATA Technology AD73I1C1674EV 4GB
Samsung M378B1G73DB0-CK0 8GB

Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB RAM的比较

AMD AE34G1601U1 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology CT51264BA1339.C16F 4GB
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Kingston 9905712-001.B00G 16GB
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Kingston 8ATF1G64AZ-2G1B1 8GB
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Wilk Elektronik S.A. GR2666D464L19/16G 16GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
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Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB
Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB
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Kingston 99U5471-052.A00LF 8GB
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内存RAM
Samsung M395T2863QZ4-CF76 1GB
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内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
内存RAM
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Samsung DDR3 8GB 1600MHz 8GB
A-DATA Technology DDR4 3300 2OZ 4GB
A-DATA Technology DDR4 3300 2OZ 4GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
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Crucial Technology BL8G26C16U4R.8FD 8GB
内存RAM
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Kingston 9905403-156.A00LF 2GB
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Apacer Technology 78.CAGN4.4020B 8GB
内存RAM
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Crucial Technology CT102464BA160B.M16 8GB
Corsair CMW32GX4M4D3600C16 8GB
Corsair CMW32GX4M4D3600C16 8GB
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