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SK Hynix HMT31GR7CFR4C-PB 8GB
Patriot Memory (PDP Systems) PSD416G21332 16GB

SK Hynix HMT31GR7CFR4C-PB 8GB vs Patriot Memory (PDP Systems) PSD416G21332 16GB

总分
star star star star star
SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

总分
star star star star star
Patriot Memory (PDP Systems) PSD416G21332 16GB

Patriot Memory (PDP Systems) PSD416G21332 16GB

差异 规格 评论

差异

SK Hynix HMT31GR7CFR4C-PB 8GB 需要考虑的原因
SK Hynix HMT31GR7CFR4C-PB 8GB
报告一个错误
Patriot Memory (PDP Systems) PSD416G21332 16GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD416G21332 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 51
    左右 -76% 更低的延时
  • 更快的读取速度，GB/s
    15.9 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.9 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT31GR7CFR4C-PB 8GB
Patriot Memory (PDP Systems) PSD416G21332 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 29
  • 读取速度，GB/s
    9.8 left arrow 15.9
  • 写入速度，GB/s
    8.2 left arrow 10.9
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2182 left arrow 3105

SK Hynix HMT31GR7CFR4C-PB 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMT31GR7CFR4C-PB 8GB
Corsair CMY8GX3M2A2666C10 4GB

Patriot Memory (PDP Systems) PSD416G21332 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Team Group Inc. TEAMGROUP-UD4-2133 8GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
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G Skill Intl F4-2400C15-8GNT 8GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Patriot Memory (PDP Systems) PSD416G21332 16GB
Patriot Memory (PDP Systems) PSD416G21332 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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内存RAM
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G Skill Intl F4-3000C16-16GTZR 16GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
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Corsair CMW64GX4M8C3000C15 8GB
内存RAM
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Samsung M3 78T3354BZ0-CCC 256MB
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A-DATA Technology AO1P32NC8W1-BDAS 8GB
内存RAM
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Samsung M3 93T5750CZA-CE6 2GB
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Apacer Technology 78.CAGQ7.ARC0B 8GB
内存RAM
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Samsung M378B5773CH0-CH9 2GB
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Patriot Memory (PDP Systems) PSD34G13332 4GB
内存RAM
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Samsung M4 70T5663CZ3-CE6 2GB
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Corsair CMU64GX4M4D3000C16 16GB
内存RAM
Kingston 99U5429-014.A00LF 4GB
Kingston 99U5429-014.A00LF 4GB
G Skill Intl F4-3200C14-8GTZSW 8GB
G Skill Intl F4-3200C14-8GTZSW 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
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Samsung M471A2K43CB1-CTCT 16GB
内存RAM
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Patriot Memory (PDP Systems) PSD34G16002 4GB
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InnoDisk Corporation M4U0-8GSSKCSJ 8GB
内存RAM
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G Skill Intl F5-6400J3239G16G 16GB
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Corsair CMSX32GX4M2A3000C18 16GB
内存RAM