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SK Hynix HMT31GR7CFR4C-PB 8GB
Samsung M386A4G40DM1-CRC 32GB

SK Hynix HMT31GR7CFR4C-PB 8GB vs Samsung M386A4G40DM1-CRC 32GB

总分
star star star star star
SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

总分
star star star star star
Samsung M386A4G40DM1-CRC 32GB

Samsung M386A4G40DM1-CRC 32GB

差异 规格 评论

差异

SK Hynix HMT31GR7CFR4C-PB 8GB 需要考虑的原因
SK Hynix HMT31GR7CFR4C-PB 8GB
报告一个错误
  • 更快的写入速度，GB/s
    8.2 left arrow 6.0
    测试中的平均数值
Samsung M386A4G40DM1-CRC 32GB 需要考虑的原因
Samsung M386A4G40DM1-CRC 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 51
    左右 -46% 更低的延时
  • 更快的读取速度，GB/s
    10.3 left arrow 9.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT31GR7CFR4C-PB 8GB
Samsung M386A4G40DM1-CRC 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 35
  • 读取速度，GB/s
    9.8 left arrow 10.3
  • 写入速度，GB/s
    8.2 left arrow 6.0
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2182 left arrow 1851

SK Hynix HMT31GR7CFR4C-PB 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMT31GR7CFR4C-PB 8GB
Corsair CMY8GX3M2A2666C10 4GB

Samsung M386A4G40DM1-CRC 32GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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内存RAM
Samsung M393B2G70BH0-CH9 16GB
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内存RAM
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Samsung M3 78T5663RZ3-CF7 2GB
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Micron Technology 16A6A2G64HZ-2-2E1 16GB
内存RAM
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Crucial Technology CT16G4DFRA266.C8FE 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
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Corsair CMW32GX4M2Z3600C14 16GB
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