SK Hynix HMT31GR7CFR4C-PB 8GB vs Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

总分

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

总分

Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

差异规格评论

差异

SK Hynix HMT31GR7CFR4C-PB 8GB

需要考虑的原因
SK Hynix HMT31GR7CFR4C-PB 8GB

报告一个错误

Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

需要考虑的原因
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 51

左右 -70% 更低的延时
更快的读取速度，GB/s

15.9 9.8

测试中的平均数值
更快的写入速度，GB/s

10.7 8.2

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT31GR7CFR4C-PB 8GB

Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 30
读取速度，GB/s

9.8 15.9
写入速度，GB/s

8.2 10.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2182 2846

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT31GR7CFR4C-PB 8GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Corsair CMW64GX4M4A2666C16 16GB

Samsung M393B1K70QB0-CK0 8GB

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Avant Technology J641GU42J7240N3 8GB

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INTENSO 5641160 8GB

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Crucial Technology CT8G4DFS8266.C8FJ 8GB

Crucial Technology CT8G4DFS8266.C8FJ 8GB