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SK Hynix HMT31GR7CFR4C-PB 8GB
V-GEN D4H8GL36A8TXV 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB vs V-GEN D4H8GL36A8TXV 8GB

总分
star star star star star
SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

总分
star star star star star
V-GEN D4H8GL36A8TXV 8GB

V-GEN D4H8GL36A8TXV 8GB

差异 规格 评论

差异

SK Hynix HMT31GR7CFR4C-PB 8GB 需要考虑的原因
SK Hynix HMT31GR7CFR4C-PB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    51 left arrow 53
    左右 4% 更低的延时
V-GEN D4H8GL36A8TXV 8GB 需要考虑的原因
V-GEN D4H8GL36A8TXV 8GB
报告一个错误
  • 更快的读取速度，GB/s
    20 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.4 left arrow 8.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT31GR7CFR4C-PB 8GB
V-GEN D4H8GL36A8TXV 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 53
  • 读取速度，GB/s
    9.8 left arrow 20.0
  • 写入速度，GB/s
    8.2 left arrow 9.4
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2182 left arrow 2366

SK Hynix HMT31GR7CFR4C-PB 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMT31GR7CFR4C-PB 8GB
Corsair CMY8GX3M2A2666C10 4GB

V-GEN D4H8GL36A8TXV 8GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Samsung M395T2863QZ4-CF76 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Samsung M395T2863QZ4-CF76 1GB
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Kingston 9905403-156.A00LF 2GB
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内存RAM
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内存RAM
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内存RAM
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Crucial Technology CT25664BA160B.C16F 2GB
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内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-2400C15-4GRR 4GB
G Skill Intl F4-2400C15-4GRR 4GB
内存RAM
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Kingston 9905678-065.A00G 8GB
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内存RAM
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Crucial Technology CT16G4SFD824A.M16FJ 16GB
Crucial Technology CT16G4SFD824A.M16FJ 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
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Kingston 9905663-021.A00G 16GB
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