SK Hynix HMT325S6BFR8C-H9 2GB vs Avant Technology W641GU42J9266NC 8GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

Avant Technology W641GU42J9266NC 8GB

Avant Technology W641GU42J9266NC 8GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

Avant Technology W641GU42J9266NC 8GB

需要考虑的原因
Avant Technology W641GU42J9266NC 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 41

左右 -86% 更低的延时
更快的读取速度，GB/s

17.7 11.6

测试中的平均数值
更快的写入速度，GB/s

13.7 7.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

Avant Technology W641GU42J9266NC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 22
读取速度，GB/s

11.6 17.7
写入速度，GB/s

7.3 13.7
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1438 3096

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-4000C17-16GTZRB 16GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Avant Technology W641GU42J9266NC 8GB

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Samsung 16KTF1G64AZ-1G9P1 8GB

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Smart Modular SMS4WEC3C0K0446SCG 4GB

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Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

Mushkin 991988 (996988) 4GB

Mushkin 991988 (996988) 4GB

ISD Technology Limited KD48GU880-32A160X 8GB

ISD Technology Limited KD48GU880-32A160X 8GB

SK Hynix HMT451U7BFR8C-RD 4GB

SK Hynix HMT451U7BFR8C-RD 4GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB

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Kingston 99U5474-013.A00LF 2GB

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Smart Modular SMU4WEC8C1K0464FCG 8GB

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Kingston SNY1600S11-4G-EDEG 4GB

Kingston SNY1600S11-4G-EDEG 4GB

G Skill Intl F4-3333C16-8GTZSK 8GB

G Skill Intl F4-3333C16-8GTZSK 8GB