SK Hynix HMT451U7BFR8C-RD 4GB vs Micron Technology 18ASF1G72AZ-2G1B1 8GB

总分

SK Hynix HMT451U7BFR8C-RD 4GB

SK Hynix HMT451U7BFR8C-RD 4GB

总分

Micron Technology 18ASF1G72AZ-2G1B1 8GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB

差异规格评论

差异

SK Hynix HMT451U7BFR8C-RD 4GB

需要考虑的原因
SK Hynix HMT451U7BFR8C-RD 4GB

报告一个错误

更快的读取速度，GB/s

12.8 9.6

测试中的平均数值
更快的写入速度，GB/s

9.0 8.6

测试中的平均数值

Micron Technology 18ASF1G72AZ-2G1B1 8GB

需要考虑的原因
Micron Technology 18ASF1G72AZ-2G1B1 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 42

左右 -27% 更低的延时
更高的内存带宽，mbps

17000 14900

左右 1.14 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT451U7BFR8C-RD 4GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 33
读取速度，GB/s

12.8 9.6
写入速度，GB/s

9.0 8.6
内存带宽，mbps

14900 17000

Other

描述

PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-10-9-28 / 1866 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2269 2286

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Crucial Technology CT8G4DFS8266.C8FJ 8GB

Crucial Technology CT8G4DFS8266.C8FJ 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Avant Technology J642GU42J7240NF 16GB

Avant Technology J642GU42J7240NF 16GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Corsair CM4X16GC3000C15K4 16GB

Corsair CM4X16GC3000C15K4 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Kingston 9905598-025.A00G 8GB

Kingston 9905598-025.A00G 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

SK Hynix HMA851U6DJR6N-WM 4GB

SK Hynix HMA851U6DJR6N-WM 4GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Kingston 9965596-023.B01G 8GB

Kingston 9965596-023.B01G 8GB

Kingston KVR800D2S6/4G 4GB

Kingston KVR800D2S6/4G 4GB

SK Hynix HYMP151F72CPD43-S6 4GB

SK Hynix HYMP151F72CPD43-S6 4GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Crucial Technology CT4G4SFS824A.C8FBD2 4GB

Crucial Technology CT4G4SFS824A.C8FBD2 4GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

A Force Manufacturing Ltd. UD-01G64V2133P 8GB

A Force Manufacturing Ltd. UD-01G64V2133P 8GB

Corsair CM3B4G2C1600L9 4GB

Corsair CM3B4G2C1600L9 4GB

Wilk Elektronik S.A. GR3200D464L22/16G 16GB

Wilk Elektronik S.A. GR3200D464L22/16G 16GB