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Samsung M378A1G43DB0-CPB 8GB
Wilk Elektronik S.A. IRX2666D464L16/16G 16GB

Samsung M378A1G43DB0-CPB 8GB vs Wilk Elektronik S.A. IRX2666D464L16/16G 16GB

总分
star star star star star
Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

总分
star star star star star
Wilk Elektronik S.A. IRX2666D464L16/16G 16GB

Wilk Elektronik S.A. IRX2666D464L16/16G 16GB

差异 规格 评论

差异

Samsung M378A1G43DB0-CPB 8GB 需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15 left arrow 14
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.3 left arrow 8.9
    测试中的平均数值
Wilk Elektronik S.A. IRX2666D464L16/16G 16GB 需要考虑的原因
Wilk Elektronik S.A. IRX2666D464L16/16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 36
    左右 -20% 更低的延时

规格

完整的技术规格清单
Samsung M378A1G43DB0-CPB 8GB
Wilk Elektronik S.A. IRX2666D464L16/16G 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 30
  • 读取速度，GB/s
    15.0 left arrow 14.0
  • 写入速度，GB/s
    10.3 left arrow 8.9
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2569 left arrow 2716

Samsung M378A1G43DB0-CPB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Wilk Elektronik S.A. IRX2666D464L16/16G 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Wilk Elektronik S.A. IRX2666D464L16/16G 16GB
Wilk Elektronik S.A. IRX2666D464L16/16G 16GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
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G Skill Intl F4-2133C15-8GNT 8GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
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Kingston 99U5711-001.A00G 4GB
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Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
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Team Group Inc. TEAMGROUP-UD4-4300 8GB
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Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
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Kingston MSI24D4D4S8MB-8 8GB
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Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
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Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
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Apacer Technology 78.CAGQ7.ARC0B 8GB
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Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
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Corsair CMK32GX4M2D3600C18 16GB
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AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
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Corsair CMH32GX4M2Z3200C16 16GB
内存RAM
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Nanya Technology NT2GT64U8HD0BN-AD 2GB
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Apacer Technology 78.DAGP2.4030B 16GB
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
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Century Micro Inc. CENTURY JAPAN MEMORY 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
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Crucial Technology BLS4G4D240FSB.8FBD 4GB
内存RAM
Ramaxel Technology RMT3010EC58E8F1333 2GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
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Chun Well Technology Holding Limited D4U1636144B 16GB
内存RAM