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SK Hynix HMT325S6BFR8C-H9 2GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
比较
SK Hynix HMT325S6BFR8C-H9 2GB vs Chun Well Technology Holding Limited MD4U0840180BCW 8GB
总分
SK Hynix HMT325S6BFR8C-H9 2GB
总分
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB
报告一个错误
需要考虑的原因
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
报告一个错误
低于PassMark测试中的延时,ns
26
41
左右 -58% 更低的延时
更快的读取速度,GB/s
18.2
11.6
测试中的平均数值
更快的写入速度,GB/s
17.3
7.3
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
SK Hynix HMT325S6BFR8C-H9 2GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
41
26
读取速度,GB/s
11.6
18.2
写入速度,GB/s
7.3
17.3
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1438
3938
SK Hynix HMT325S6BFR8C-H9 2GB RAM的比较
Elpida EBJ21UE8BDS0-DJ-F 2GB
Kingston 99U5469-041.A00LF 4GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Apacer Technology 78.01G86.9H50C 1GB
Kingmax Semiconductor GSAG42F-18---------- 8GB
Samsung M471B5273EB0-CK0 4GB
Corsair CMK8GX4M2B3866C18 4GB
SK Hynix HMT31GR7CFR4C-PB 8GB
G Skill Intl F4-4400C18-8GTZRC 8GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Good Wealth Technology Ltd. KETECH 8GB
Kingston KHX318C10FR/8G 8GB
G Skill Intl F4-2800C15-4GVRB 4GB
Corsair CMX8GX3M2A2000C9 4GB
Kingston 9905624-014.A00G 4GB
SK Hynix HMT325S6BFR8C-H9 2GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Kingmax Semiconductor GZAG43F-18---------- 8GB
Hexon Technology Pte Ltd HEXON 1GB
Samsung 9905599-020.A00G 16GB
Micron Technology 18HTF12872AY-800F1 1GB
Kingston 99U5743-031.A00G 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Samsung M378B5773DH0-CH9 2GB
Essencore Limited IM44GU48N21-FFFHM 4GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-4000C19-16GTRS 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology DDR4 3300 2OZ 4GB
报告一个错误
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Bug description
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