SK Hynix HMT325S6BFR8C-H9 2GB vs Crucial Technology BLS8G4D32AESTK.M8FE1 8GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

Crucial Technology BLS8G4D32AESTK.M8FE1 8GB

Crucial Technology BLS8G4D32AESTK.M8FE1 8GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

低于PassMark测试中的延时，ns

41 43

左右 5% 更低的延时

Crucial Technology BLS8G4D32AESTK.M8FE1 8GB

需要考虑的原因
Crucial Technology BLS8G4D32AESTK.M8FE1 8GB

报告一个错误

更快的读取速度，GB/s

16.7 11.6

测试中的平均数值
更快的写入速度，GB/s

10.5 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

Crucial Technology BLS8G4D32AESTK.M8FE1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 43
读取速度，GB/s

11.6 16.7
写入速度，GB/s

7.3 10.5
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1438 2430

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingmax Semiconductor FLFF65F-C8KM9 4GB

Kingmax Semiconductor FLFF65F-C8KM9 4GB

Crucial Technology BL32G32C16U4B.M16FB1 32GB

Crucial Technology BL32G32C16U4B.M16FB1 32GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Maxsun MSD48G30Q3 8GB

Maxsun MSD48G30Q3 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Crucial Technology BLS8G4S26BFSD.16FBR2 8GB

Crucial Technology BLS8G4S26BFSD.16FBR2 8GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMK128GX4M8X3600C18 16GB

Corsair CMK128GX4M8X3600C18 16GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Corsair CM4X16GE2666C16K2 16GB

Corsair CM4X16GE2666C16K2 16GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Crucial Technology CT8G4DFS8213.C8FAD1 8GB

Crucial Technology CT8G4DFS8213.C8FAD1 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Team Group Inc. TEANGROUP-UD4-2400 8GB

Team Group Inc. TEANGROUP-UD4-2400 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Kingston 9905663-030.A00G 16GB

Kingston 9905663-030.A00G 16GB

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

Kllisre 99P54280002.A00LF 8GB

Kllisre 99P54280002.A00LF 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Corsair CMD128GX4M8B3000C16 16GB

Corsair CMD128GX4M8B3000C16 16GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

G Skill Intl F4-3466C16-8GVR 8GB

G Skill Intl F4-3466C16-8GVR 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Micron Technology 8ATF51264AZ-2G1A2 4GB

Micron Technology 8ATF51264AZ-2G1A2 4GB

A-DATA Technology AD4S3200316G22-BHYD 16GB

A-DATA Technology AD4S3200316G22-BHYD 16GB

G Skill Intl F4-3200C15-8GTZKY 8GB

G Skill Intl F4-3200C15-8GTZKY 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

G Skill Intl F4-3600C16-8GTESC 8GB

G Skill Intl F4-3600C16-8GTESC 8GB