PNY Electronics PNY 2GB vs G Skill Intl F4-3600C16-8GTESC 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

G Skill Intl F4-3600C16-8GTESC 8GB

G Skill Intl F4-3600C16-8GTESC 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 31

左右 13% 更低的延时

G Skill Intl F4-3600C16-8GTESC 8GB

需要考虑的原因
G Skill Intl F4-3600C16-8GTESC 8GB

报告一个错误

更快的读取速度，GB/s

20.3 13.8

测试中的平均数值
更快的写入速度，GB/s

18.2 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

G Skill Intl F4-3600C16-8GTESC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 31
读取速度，GB/s

13.8 20.3
写入速度，GB/s

8.4 18.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 3738

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A1K43BB1-CTD 16GB

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Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB

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Kingston KHX1600C9D3/8G 8GB

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Micron Technology 9ASF1G72PZ-2G3A1 8GB

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Corsair CM4X16GC3600C18K2D 16GB

Corsair CM4X16GC3600C18K2D 16GB