SK Hynix HMT325S6BFR8C-H9 2GB vs Essencore Limited IM48GU88N26-GIIHA 8GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

Essencore Limited IM48GU88N26-GIIHA 8GB

Essencore Limited IM48GU88N26-GIIHA 8GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

低于PassMark测试中的延时，ns

41 60

左右 32% 更低的延时

Essencore Limited IM48GU88N26-GIIHA 8GB

需要考虑的原因
Essencore Limited IM48GU88N26-GIIHA 8GB

报告一个错误

更快的读取速度，GB/s

18 11.6

测试中的平均数值
更快的写入速度，GB/s

8.8 7.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

Essencore Limited IM48GU88N26-GIIHA 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 60
读取速度，GB/s

11.6 18.0
写入速度，GB/s

7.3 8.8
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1438 2145

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Mushkin MR[ABC]4U320GJJM8G 8GB

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G Skill Intl F3-2133C9-4GAB 4GB

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Panram International Corporation W4U2666PS-8GC19 8GB

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Corsair CMU16GX4M2C3000C15 8GB

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PNY Electronics PNY 2GB

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Samsung M3 78T2953EZ3-CF7 1GB

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Corsair CMD64GX4M8X4000C19 8GB

Corsair CMD64GX4M8X4000C19 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Kingston 8ATF1G64HZ-2G3B2 8GB

Kingston 8ATF1G64HZ-2G3B2 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Samsung M378A1K43BB1-CTD 16GB

Samsung M378A1K43BB1-CTD 16GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Corsair CM4X16GC3000C16K4D 16GB

Corsair CM4X16GC3000C16K4D 16GB