RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
SK Hynix HMT325S6BFR8C-H9 2GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

SK Hynix HMT325S6BFR8C-H9 2GB vs Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

总分
star star star star star
SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分
star star star star star
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

差异 规格 评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB 需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB
报告一个错误
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB 需要考虑的原因
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    14 left arrow 41
    左右 -193% 更低的延时
  • 更快的读取速度，GB/s
    26.4 left arrow 11.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    19.8 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT325S6BFR8C-H9 2GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 14
  • 读取速度，GB/s
    11.6 left arrow 26.4
  • 写入速度，GB/s
    7.3 left arrow 19.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1438 left arrow 4362

SK Hynix HMT325S6BFR8C-H9 2GB RAM的比较

Elpida EBJ21UE8BDS0-DJ-F 2GB
Kingston 99U5469-041.A00LF 4GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
Crucial Technology BL16G26C16U4W.16FD 16GB
Crucial Technology BL16G26C16U4W.16FD 16GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
内存RAM
Kingston KHX2400C11D3/4GX 4GB
Kingston KHX2400C11D3/4GX 4GB
Mushkin MR[ABC]4U320GJJM8G 8GB
Mushkin MR[ABC]4U320GJJM8G 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Crucial Technology CT8G4DFD824A.C16FDR2 8GB
Crucial Technology CT8G4DFD824A.C16FDR2 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston KHX2133C13S4/4G 4GB
Kingston KHX2133C13S4/4G 4GB
内存RAM
Kingston 99U5403-465.A00LF 8GB
Kingston 99U5403-465.A00LF 8GB
Corsair CMD128GX4M8B3200C16 16GB
Corsair CMD128GX4M8B3200C16 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Crucial Technology BL16G36C16U4B.M8FB1 16GB
Crucial Technology BL16G36C16U4B.M8FB1 16GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kllisre M471A3243BB0-CP50 16GB
Kllisre M471A3243BB0-CP50 16GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Apacer Technology 78.CAGPN.AZ50C 8GB
Apacer Technology 78.CAGPN.AZ50C 8GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
Samsung M471A2K43BB1-CTD 16GB
Samsung M471A2K43BB1-CTD 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3300C16-4GRKD 4GB
G Skill Intl F4-3300C16-4GRKD 4GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Crucial Technology CT8G4SFS8266.M8FB 8GB
Crucial Technology CT8G4SFS8266.M8FB 8GB
内存RAM