SK Hynix HMT325S6BFR8C-H9 2GB vs Kingston 9905663-021.A00G 16GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

Kingston 9905663-021.A00G 16GB

Kingston 9905663-021.A00G 16GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

Kingston 9905663-021.A00G 16GB

需要考虑的原因
Kingston 9905663-021.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 41

左右 -28% 更低的延时
更快的读取速度，GB/s

14.2 11.6

测试中的平均数值
更快的写入速度，GB/s

7.4 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

Kingston 9905663-021.A00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 32
读取速度，GB/s

11.6 14.2
写入速度，GB/s

7.3 7.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1438 2174

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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PUSKILL PJ16TFK1GM8 16GB

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Samsung M4 70T2864QZ3-CE6 1GB

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Kingston 9905403-090.A01LF 4GB

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Avant Technology W6451U66J5213ND 4GB

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Samsung 1600 CL10 Series 8GB

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G Skill Intl F4-2666C19-8GSXK 8GB

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Samsung M393B5170FH0-CK0 4GB

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AMD R5S38G1601U2S 8GB

Crucial Technology BL16G36C16U4BL.M8FB1 16GB

Crucial Technology BL16G36C16U4BL.M8FB1 16GB

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Kingston KHX1600C9D3/8G 8GB

Kingston CBD24D4S7S8ME-8 8GB

Kingston CBD24D4S7S8ME-8 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Gold Key Technology Co Ltd GKE160SO102408-2666 16GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Corsair CMW16GX4M2C3466C16 8GB

Corsair CMW16GX4M2C3466C16 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CMK16GX4M2A2666C16 8GB

Corsair CMK16GX4M2A2666C16 8GB