SK Hynix HMT325S6BFR8C-H9 2GB vs Kingston 9905701-017.A00G 16GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

Kingston 9905701-017.A00G 16GB

Kingston 9905701-017.A00G 16GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

Kingston 9905701-017.A00G 16GB

需要考虑的原因
Kingston 9905701-017.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 41

左右 -32% 更低的延时
更快的读取速度，GB/s

17 11.6

测试中的平均数值
更快的写入速度，GB/s

14.3 7.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

Kingston 9905701-017.A00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 31
读取速度，GB/s

11.6 17.0
写入速度，GB/s

7.3 14.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1438 3260

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMY8GX3M2A2666C10 4GB

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Corsair CMK8GX4M1D2400C14 8GB

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Samsung M471B5273DH0-CH9 4GB

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Essencore Limited KD48GU880-32N220T 8GB

Essencore Limited KD48GU880-32N220T 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

G Skill Intl F4-2400C17-8GDBVR 8GB

G Skill Intl F4-2400C17-8GDBVR 8GB

Nanya Technology M2F4G64CB8HB5N-CG 4GB

Nanya Technology M2F4G64CB8HB5N-CG 4GB

SK Hynix HMA41GR7BJR4N-UH 8GB

SK Hynix HMA41GR7BJR4N-UH 8GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Micron Technology M471A1K43BB1-CRC 8GB

Micron Technology M471A1K43BB1-CRC 8GB