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Nanya Technology M2F4G64CB8HB5N-CG 4GB
SK Hynix HMA41GR7BJR4N-UH 8GB

Nanya Technology M2F4G64CB8HB5N-CG 4GB vs SK Hynix HMA41GR7BJR4N-UH 8GB

总分
star star star star star
Nanya Technology M2F4G64CB8HB5N-CG 4GB

Nanya Technology M2F4G64CB8HB5N-CG 4GB

总分
star star star star star
SK Hynix HMA41GR7BJR4N-UH 8GB

SK Hynix HMA41GR7BJR4N-UH 8GB

差异 规格 评论

差异

Nanya Technology M2F4G64CB8HB5N-CG 4GB 需要考虑的原因
Nanya Technology M2F4G64CB8HB5N-CG 4GB
报告一个错误
  • 更快的读取速度，GB/s
    14.3 left arrow 12.5
    测试中的平均数值
SK Hynix HMA41GR7BJR4N-UH 8GB 需要考虑的原因
SK Hynix HMA41GR7BJR4N-UH 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 35
    左右 -21% 更低的延时
  • 更快的写入速度，GB/s
    9.7 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F4G64CB8HB5N-CG 4GB
SK Hynix HMA41GR7BJR4N-UH 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 29
  • 读取速度，GB/s
    14.3 left arrow 12.5
  • 写入速度，GB/s
    8.6 left arrow 9.7
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2308 left arrow 2609

Nanya Technology M2F4G64CB8HB5N-CG 4GB RAM的比较

SK Hynix HMA41GR7AFR4N-TF 8GB

SK Hynix HMA41GR7BJR4N-UH 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2F4G64CB8HB5N-CG 4GB
Nanya Technology M2F4G64CB8HB5N-CG 4GB
SK Hynix HMA41GR7BJR4N-UH 8GB
SK Hynix HMA41GR7BJR4N-UH 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Golden Empire CL16-16-16 D4-2800 8GB
Golden Empire CL16-16-16 D4-2800 8GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Samsung M393A2K43DB3-CWE 16GB
Samsung M393A2K43DB3-CWE 16GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Crucial Technology BLT8G4D26AFTA.16FAD 8GB
Crucial Technology BLT8G4D26AFTA.16FAD 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Virtium Technology Inc. VL33A1G63F-N6S 8GB
Virtium Technology Inc. VL33A1G63F-N6S 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-3000C16-8GSXFB 8GB
G Skill Intl F4-3000C16-8GSXFB 8GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Kingston 9965669-018.A00G 16GB
Kingston 9965669-018.A00G 16GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology BLS4G4D240FSA.8FAR 4GB
Crucial Technology BLS4G4D240FSA.8FAR 4GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
Kingston 99U5663-001.A00G 16GB
Kingston 99U5663-001.A00G 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Mushkin 99[2/7/4]192[F/T] 4GB
Mushkin 99[2/7/4]192[F/T] 4GB
内存RAM
Samsung M391B5273CH0-CH9 4GB
Samsung M391B5273CH0-CH9 4GB
Kingston KVR26N19D8/16 16GB
Kingston KVR26N19D8/16 16GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Jinyu 16GB
Jinyu 16GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Teikon TMA851S6AFR6N-UHHC 4GB
Teikon TMA851S6AFR6N-UHHC 4GB
内存RAM
Samsung M471A5143SB1-CRC 4GB
Samsung M471A5143SB1-CRC 4GB
Crucial Technology CT16G4SFD8266.C16FD1 16GB
Crucial Technology CT16G4SFD8266.C16FD1 16GB
内存RAM