SK Hynix HMT325S6BFR8C-H9 2GB vs Samsung M471A5143SB1-CRC 4GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

Samsung M471A5143SB1-CRC 4GB

Samsung M471A5143SB1-CRC 4GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

Samsung M471A5143SB1-CRC 4GB

需要考虑的原因
Samsung M471A5143SB1-CRC 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 41

左右 -71% 更低的延时
更快的读取速度，GB/s

14.9 11.6

测试中的平均数值
更快的写入速度，GB/s

10.6 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

Samsung M471A5143SB1-CRC 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 24
读取速度，GB/s

11.6 14.9
写入速度，GB/s

7.3 10.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1438 2196

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9965525-018.A00LF 4GB

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Corsair CM4X8GE2133C13K4 8GB

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Crucial Technology CT8G4SFS8266.C8FD1 8GB

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A-DATA Technology DDR3 1600 4GB

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Essencore Limited IM48GU88A30-FGGHMZ 8GB

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A-DATA Technology DQKD1A08 1GB

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Kingston 9905625-074.A00G 16GB

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G Skill Intl F4-4000C16-16GVK 16GB

G Skill Intl F4-4000C16-16GVK 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Patriot Memory (PDP Systems) PSD416G24002S 16GB

Patriot Memory (PDP Systems) PSD416G24002S 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

AMD R7416G2133U2S 16GB

AMD R7416G2133U2S 16GB

Corsair CMX8GX3M2A1600C11 4GB

Corsair CMX8GX3M2A1600C11 4GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

Crucial Technology CT8G4SFS824A.C8FE 8GB

Crucial Technology CT8G4SFS824A.C8FE 8GB