RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
SK Hynix HMT325S6CFR8C-H9 2GB
Crucial Technology CT16G4SFD8266.C8FBD1 16GB

SK Hynix HMT325S6CFR8C-H9 2GB vs Crucial Technology CT16G4SFD8266.C8FBD1 16GB

总分
star star star star star
SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

总分
star star star star star
Crucial Technology CT16G4SFD8266.C8FBD1 16GB

Crucial Technology CT16G4SFD8266.C8FBD1 16GB

差异 规格 评论

差异

SK Hynix HMT325S6CFR8C-H9 2GB 需要考虑的原因
SK Hynix HMT325S6CFR8C-H9 2GB
报告一个错误
Crucial Technology CT16G4SFD8266.C8FBD1 16GB 需要考虑的原因
Crucial Technology CT16G4SFD8266.C8FBD1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 43
    左右 -95% 更低的延时
  • 更快的读取速度，GB/s
    18 left arrow 10.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.3 left arrow 6.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT325S6CFR8C-H9 2GB
Crucial Technology CT16G4SFD8266.C8FBD1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 22
  • 读取速度，GB/s
    10.7 left arrow 18.0
  • 写入速度，GB/s
    6.8 left arrow 14.3
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1314 left arrow 3430

SK Hynix HMT325S6CFR8C-H9 2GB RAM的比较

Wilk Elektronik S.A. GR1600S364L11/8G 8GB
Kingston ACR256X64D3S1333C9 2GB

Crucial Technology CT16G4SFD8266.C8FBD1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CMZ16GX3M2A1866C9 8GB
Corsair CMZ16GX3M2A1866C9 8GB
Avexir Technologies Corporation T-20181206 8GB
Avexir Technologies Corporation T-20181206 8GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
Corsair CMR32GX4M4C3600C18 8GB
Corsair CMR32GX4M4C3600C18 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-4000C18-8GTZR 8GB
G Skill Intl F4-4000C18-8GTZR 8GB
内存RAM
A-DATA Technology AM1P26KCST2-BABS 16GB
A-DATA Technology AM1P26KCST2-BABS 16GB
Kingston 9905783-025.A01G 16GB
Kingston 9905783-025.A01G 16GB
内存RAM
Kingston 9905471-006.A00LF 4GB
Kingston 9905471-006.A00LF 4GB
G Skill Intl F4-4000C18-8GTZRB 8GB
G Skill Intl F4-4000C18-8GTZRB 8GB
内存RAM
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
V-Color Technology Inc. TL48G32S8RRGB16 8GB
V-Color Technology Inc. TL48G32S8RRGB16 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KHX2400C1C14/16G 16GB
Kingston KHX2400C1C14/16G 16GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-2133C15-8GVK 8GB
G Skill Intl F4-2133C15-8GVK 8GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
ISD Technology Limited IM44GU48A30-GIIHM 4GB
ISD Technology Limited IM44GU48A30-GIIHM 4GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-4000C19-16GTRG 16GB
G Skill Intl F4-4000C19-16GTRG 16GB
内存RAM
Kingston KHX1866C9D3/8GX 8GB
Kingston KHX1866C9D3/8GX 8GB
Micron Technology 8ATF1G64HZ-2G6E1 8GB
Micron Technology 8ATF1G64HZ-2G6E1 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
G Skill Intl F4-3400C16-8GVK 8GB
G Skill Intl F4-3400C16-8GVK 8GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Apacer Technology 78.CAGPW.40C0B 8GB
Apacer Technology 78.CAGPW.40C0B 8GB
内存RAM
Strontium SRP2G86U1-S6M 2GB
Strontium SRP2G86U1-S6M 2GB
SK Hynix HYMP125S64CP8-S6 2GB
SK Hynix HYMP125S64CP8-S6 2GB
内存RAM