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SK Hynix HMT325S6CFR8C-H9 2GB
Wilk Elektronik S.A. GR1600S364L11/8G 8GB

SK Hynix HMT325S6CFR8C-H9 2GB vs Wilk Elektronik S.A. GR1600S364L11/8G 8GB

总分
star star star star star
SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

总分
star star star star star
Wilk Elektronik S.A. GR1600S364L11/8G 8GB

Wilk Elektronik S.A. GR1600S364L11/8G 8GB

差异 规格 评论

差异

SK Hynix HMT325S6CFR8C-H9 2GB 需要考虑的原因
SK Hynix HMT325S6CFR8C-H9 2GB
报告一个错误
Wilk Elektronik S.A. GR1600S364L11/8G 8GB 需要考虑的原因
Wilk Elektronik S.A. GR1600S364L11/8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 43
    左右 -54% 更低的延时
  • 更快的读取速度，GB/s
    11.9 left arrow 10.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.3 left arrow 6.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT325S6CFR8C-H9 2GB
Wilk Elektronik S.A. GR1600S364L11/8G 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    43 left arrow 28
  • 读取速度，GB/s
    10.7 left arrow 11.9
  • 写入速度，GB/s
    6.8 left arrow 8.3
  • 内存带宽，mbps
    10600 left arrow 12800
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1314 left arrow 2108

SK Hynix HMT325S6CFR8C-H9 2GB RAM的比较

Kingston ACR256X64D3S1333C9 2GB

Wilk Elektronik S.A. GR1600S364L11/8G 8GB RAM的比较

SK Hynix HMT325U6CFR8C-H9 2GB
SK Hynix HMT351S6CFR8C-H9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
Wilk Elektronik S.A. GR1600S364L11/8G 8GB
Wilk Elektronik S.A. GR1600S364L11/8G 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology CT8G4DFS8213.M8FB 8GB
Crucial Technology CT8G4DFS8213.M8FB 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology CT4G4DFS824A.C8FHP 4GB
Crucial Technology CT4G4DFS824A.C8FHP 4GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT16G4SFD8266.16FE1 16GB
Crucial Technology CT16G4SFD8266.16FE1 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Corsair CMK16GX4M2K4500C19 8GB
Corsair CMK16GX4M2K4500C19 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CMK64GX4M2A2400C16 32GB
Corsair CMK64GX4M2A2400C16 32GB
内存RAM
Kingston 99P5471-002.A00LF 2GB
Kingston 99P5471-002.A00LF 2GB
Gloway International (HK) STKD4XMP2400-F 4GB
Gloway International (HK) STKD4XMP2400-F 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology DDR4 4133 8GB
A-DATA Technology DDR4 4133 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology BL8G32C16U4R.M8FE 8GB
Crucial Technology BL8G32C16U4R.M8FE 8GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Essencore Limited KD4AGU88C-26N1900 16GB
Essencore Limited KD4AGU88C-26N1900 16GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
A-DATA Technology AM1P26KC4U1-BACS 4GB
A-DATA Technology AM1P26KC4U1-BACS 4GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
G Skill Intl F4-3200C16-8GVSB 8GB
G Skill Intl F4-3200C16-8GVSB 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT8G4DFS8266.M8FJ 8GB
Crucial Technology CT8G4DFS8266.M8FJ 8GB
内存RAM