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SK Hynix HMT325S6CFR8C-H9 2GB
G Skill Intl F4-3600C18-16GTZN 16GB

SK Hynix HMT325S6CFR8C-H9 2GB vs G Skill Intl F4-3600C18-16GTZN 16GB

总分
star star star star star
SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

总分
star star star star star
G Skill Intl F4-3600C18-16GTZN 16GB

G Skill Intl F4-3600C18-16GTZN 16GB

差异 规格 评论

差异

SK Hynix HMT325S6CFR8C-H9 2GB 需要考虑的原因
SK Hynix HMT325S6CFR8C-H9 2GB
报告一个错误
G Skill Intl F4-3600C18-16GTZN 16GB 需要考虑的原因
G Skill Intl F4-3600C18-16GTZN 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 43
    左右 -43% 更低的延时
  • 更快的读取速度，GB/s
    17.7 left arrow 10.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.8 left arrow 6.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT325S6CFR8C-H9 2GB
G Skill Intl F4-3600C18-16GTZN 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 30
  • 读取速度，GB/s
    10.7 left arrow 17.7
  • 写入速度，GB/s
    6.8 left arrow 14.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1314 left arrow 3606

SK Hynix HMT325S6CFR8C-H9 2GB RAM的比较

Wilk Elektronik S.A. GR1600S364L11/8G 8GB
Kingston ACR256X64D3S1333C9 2GB

G Skill Intl F4-3600C18-16GTZN 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DQVE1B16 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CM4X4GF2400C16N2 4GB
Corsair CM4X4GF2400C16N2 4GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
G Skill Intl F4-3600C18-16GTZN 16GB
G Skill Intl F4-3600C18-16GTZN 16GB
内存RAM
Corsair CML16GX3M2A1600C10 8GB
Corsair CML16GX3M2A1600C10 8GB
V-Color Technology Inc. TA48G30S815G 8GB
V-Color Technology Inc. TA48G30S815G 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C18-16GTRG 16GB
G Skill Intl F4-3600C18-16GTRG 16GB
内存RAM
SK Hynix HMT451S6BFR8A-RD 4GB
SK Hynix HMT451S6BFR8A-RD 4GB
A-DATA Technology AX5U5200C3816G-B 16GB
A-DATA Technology AX5U5200C3816G-B 16GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Lexar Co Limited LD4AU016G-H2666G 16GB
Lexar Co Limited LD4AU016G-H2666G 16GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Crucial Technology BLT8G4D26AFTA.16FAD 8GB
Crucial Technology BLT8G4D26AFTA.16FAD 8GB
内存RAM
Kingston KF3200C16D4/16GX 16GB
Kingston KF3200C16D4/16GX 16GB
A-DATA Technology 11137401 8GB
A-DATA Technology 11137401 8GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Corsair CMW16GX4M2C3200C14 8GB
Corsair CMW16GX4M2C3200C14 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9965669-017.A00G 16GB
Kingston 9965669-017.A00G 16GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CM4B8G2J2400A14K 8GB
Corsair CM4B8G2J2400A14K 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Corsair CMK16GX4M2K4400C19 8GB
Corsair CMK16GX4M2K4400C19 8GB
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Neo Forza NMUD416E82-3600 16GB
Neo Forza NMUD416E82-3600 16GB
内存RAM
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Kingston KCRXJ6-HYJ 16GB
Kingston KCRXJ6-HYJ 16GB
内存RAM