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SK Hynix HMT325S6CFR8C-H9 2GB
Micron Technology 36ASF4G72PZ-2G1B1 32GB
比较
SK Hynix HMT325S6CFR8C-H9 2GB vs Micron Technology 36ASF4G72PZ-2G1B1 32GB
总分
SK Hynix HMT325S6CFR8C-H9 2GB
总分
Micron Technology 36ASF4G72PZ-2G1B1 32GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMT325S6CFR8C-H9 2GB
报告一个错误
需要考虑的原因
Micron Technology 36ASF4G72PZ-2G1B1 32GB
报告一个错误
低于PassMark测试中的延时,ns
32
43
左右 -34% 更低的延时
更快的读取速度,GB/s
11.1
10.7
测试中的平均数值
更快的写入速度,GB/s
6.9
6.8
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
SK Hynix HMT325S6CFR8C-H9 2GB
Micron Technology 36ASF4G72PZ-2G1B1 32GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
43
32
读取速度,GB/s
10.7
11.1
写入速度,GB/s
6.8
6.9
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1314
2238
SK Hynix HMT325S6CFR8C-H9 2GB RAM的比较
Wilk Elektronik S.A. GR1600S364L11/8G 8GB
Kingston ACR256X64D3S1333C9 2GB
Micron Technology 36ASF4G72PZ-2G1B1 32GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-2400C15-8GRR 8GB
Kingston 9905471-076.A00LF 8GB
G Skill Intl F4-3200C16-16GSXKB 16GB
Kingston KHX2133C11D3/4GX 4GB
G Skill Intl F4-2666C15-4GVR 4GB
Kingston 99U5458-008.A00LF 4GB
Avant Technology W641GU48J7240ND 8GB
SK Hynix HYMP125U64CP8-S6 2GB
Kingston 9905744-006.A00G 16GB
Samsung M393B1K70CH0-CH9 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
SK Hynix HMT325S6CFR8C-H9 2GB
Micron Technology 36ASF4G72PZ-2G1B1 32GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3200C16-8GTZSK 8GB
AMD R538G1601U2S-UO 8GB
G Skill Intl F4-3600C18-32GTRG 32GB
AMD R5316G1609U2K 8GB
SK Hynix HMA82GS6CJR8N-V-V 16GB
AMD R5316G1609U2K 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
Samsung M4 70T5663CZ3-CE6 2GB
Corsair CM4X16GC3200C16K4 16GB
Kingston KHX1600C9S3L/8G 8GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N
报告一个错误
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Bug description
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