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SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMA81GS6CJR8N-VK 8GB

SK Hynix HMT325S6CFR8C-H9 2GB vs SK Hynix HMA81GS6CJR8N-VK 8GB

总分
star star star star star
SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

总分
star star star star star
SK Hynix HMA81GS6CJR8N-VK 8GB

SK Hynix HMA81GS6CJR8N-VK 8GB

差异 规格 评论

差异

SK Hynix HMT325S6CFR8C-H9 2GB 需要考虑的原因
SK Hynix HMT325S6CFR8C-H9 2GB
报告一个错误
SK Hynix HMA81GS6CJR8N-VK 8GB 需要考虑的原因
SK Hynix HMA81GS6CJR8N-VK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 43
    左右 -23% 更低的延时
  • 更快的读取速度，GB/s
    15.1 left arrow 10.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.3 left arrow 6.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMA81GS6CJR8N-VK 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 35
  • 读取速度，GB/s
    10.7 left arrow 15.1
  • 写入速度，GB/s
    6.8 left arrow 11.3
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1314 left arrow 2631

SK Hynix HMT325S6CFR8C-H9 2GB RAM的比较

Wilk Elektronik S.A. GR1600S364L11/8G 8GB
Kingston ACR256X64D3S1333C9 2GB

SK Hynix HMA81GS6CJR8N-VK 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hypertec G2RT-4AFT00 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMA81GS6CJR8N-VK 8GB
SK Hynix HMA81GS6CJR8N-VK 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Samsung M393A2K40BB1-CRC 16GB
Samsung M393A2K40BB1-CRC 16GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Micron Technology M471A1K43BB1-CRC 8GB
Micron Technology M471A1K43BB1-CRC 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BLS4G4D240FSE.8FBD2 4GB
Crucial Technology BLS4G4D240FSE.8FBD2 4GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMK128GX4M4E3200C16 32GB
Corsair CMK128GX4M4E3200C16 32GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Ramaxel Technology RMSA3320KE78HAF-3200 8GB
Ramaxel Technology RMSA3320KE78HAF-3200 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 9ASF51272PZ-2G1B1 4GB
Micron Technology 9ASF51272PZ-2G1B1 4GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Corsair CMU32GX4M4C3400C16 8GB
Corsair CMU32GX4M4C3400C16 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Kingston KF3733C19D4/16GX 16GB
Kingston KF3733C19D4/16GX 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Micron Technology 16ATF2G64HZ-2G3B2 16GB
Micron Technology 16ATF2G64HZ-2G3B2 16GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston 9905678-041.A00G 4GB
Kingston 9905678-041.A00G 4GB
内存RAM