SK Hynix HMT325S6CFR8C-PB 2GB vs A-DATA Technology DDR4 3333 2OZ 4GB

总分

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

总分

A-DATA Technology DDR4 3333 2OZ 4GB

A-DATA Technology DDR4 3333 2OZ 4GB

差异规格评论

差异

SK Hynix HMT325S6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325S6CFR8C-PB 2GB

报告一个错误

A-DATA Technology DDR4 3333 2OZ 4GB

需要考虑的原因
A-DATA Technology DDR4 3333 2OZ 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 38

左右 -58% 更低的延时
更快的读取速度，GB/s

15.7 10.9

测试中的平均数值
更快的写入速度，GB/s

12.3 6.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6CFR8C-PB 2GB

A-DATA Technology DDR4 3333 2OZ 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 24
读取速度，GB/s

10.9 15.7
写入速度，GB/s

6.6 12.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1406 2517

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB

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Mushkin MES4S213FF16G28 16GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Gloway International (HK) STKD4GAM2133-F 8GB

Gloway International (HK) STKD4GAM2133-F 8GB

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G Skill Intl F3-2133C9-4GAB 4GB

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Kingston 99U5474-010.A00LF 2GB

Crucial Technology CT8G4SFS824A.M8FB 8GB

Crucial Technology CT8G4SFS824A.M8FB 8GB