SK Hynix HMT325S6CFR8C-PB 2GB vs AMD R748G2400S2S 8GB

总分

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

总分

AMD R748G2400S2S 8GB

AMD R748G2400S2S 8GB

差异规格评论

差异

SK Hynix HMT325S6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325S6CFR8C-PB 2GB

报告一个错误

低于PassMark测试中的延时，ns

38 135

左右 72% 更低的延时

AMD R748G2400S2S 8GB

需要考虑的原因
AMD R748G2400S2S 8GB

报告一个错误

更快的读取速度，GB/s

15.2 10.9

测试中的平均数值
更快的写入速度，GB/s

8.2 6.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6CFR8C-PB 2GB

AMD R748G2400S2S 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 135
读取速度，GB/s

10.9 15.2
写入速度，GB/s

6.6 8.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1406 1359

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99U5471-052.A00LF 8GB

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Crucial Technology CT8G4SFRA266.C8FD1 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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G Skill Intl F4-4000C19-16GTZKK 16GB

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Crucial Technology CT16G4DFRA266.C8FB 16GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Kingston KVR533D2N4 512MB

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Corsair CMW32GX4M4K4266C19 8GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Corsair CMR128GX4M8X3800C19 16GB

Corsair CMR128GX4M8X3800C19 16GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Samsung M471A5644EB0-CPB 2GB

Samsung M471A5644EB0-CPB 2GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Wilk Elektronik S.A. GR2666D464L19/16GN 16GB

Wilk Elektronik S.A. GR2666D464L19/16GN 16GB