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SK Hynix HMT325S6CFR8C-PB 2GB
Crucial Technology BL16G26C16U4B.16FD 16GB

SK Hynix HMT325S6CFR8C-PB 2GB vs Crucial Technology BL16G26C16U4B.16FD 16GB

总分
star star star star star
SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

总分
star star star star star
Crucial Technology BL16G26C16U4B.16FD 16GB

Crucial Technology BL16G26C16U4B.16FD 16GB

差异 规格 评论

差异

SK Hynix HMT325S6CFR8C-PB 2GB 需要考虑的原因
SK Hynix HMT325S6CFR8C-PB 2GB
报告一个错误
Crucial Technology BL16G26C16U4B.16FD 16GB 需要考虑的原因
Crucial Technology BL16G26C16U4B.16FD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 38
    左右 -27% 更低的延时
  • 更快的读取速度，GB/s
    17.2 left arrow 10.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.5 left arrow 6.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT325S6CFR8C-PB 2GB
Crucial Technology BL16G26C16U4B.16FD 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 30
  • 读取速度，GB/s
    10.9 left arrow 17.2
  • 写入速度，GB/s
    6.6 left arrow 14.5
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1406 left arrow 3505

SK Hynix HMT325S6CFR8C-PB 2GB RAM的比较

Samsung M471B5773DH0-CK0 2GB
SK Hynix HMT451S6MFR8C-PB 4GB

Crucial Technology BL16G26C16U4B.16FD 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Crucial Technology BL16G26C16U4B.16FD 16GB
Crucial Technology BL16G26C16U4B.16FD 16GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMK16GX4M4B3333C16 4GB
Corsair CMK16GX4M4B3333C16 4GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Kingston K9CXF2-MIE 8GB
Kingston K9CXF2-MIE 8GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Kingmax Semiconductor GZAG43F-18---------- 8GB
Kingmax Semiconductor GZAG43F-18---------- 8GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Kingston 9905700-053.A00G 8GB
Kingston 9905700-053.A00G 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Corsair CMK16GX4M2B3000C15 8GB
Corsair CMK16GX4M2B3000C15 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Corsair CMSX16GX4M2A3000C18 8GB
Corsair CMSX16GX4M2A3000C18 8GB
内存RAM
Crucial Technology CT51264BF160BJ.C8F 4GB
Crucial Technology CT51264BF160BJ.C8F 4GB
Corsair CMK64GX4M8B2800C14 8GB
Corsair CMK64GX4M8B2800C14 8GB
内存RAM
Kingston KHX2133C14/16G 16GB
Kingston KHX2133C14/16G 16GB
Kingston HX421C14FB/4 4GB
Kingston HX421C14FB/4 4GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology BLS16G4D30CEST.16FD 16GB
Crucial Technology BLS16G4D30CEST.16FD 16GB
内存RAM
Kingston 9905471-076.A00LF 8GB
Kingston 9905471-076.A00LF 8GB
Samsung V-GeN D4S16GL26A8TL6 16GB
Samsung V-GeN D4S16GL26A8TL6 16GB
内存RAM