SK Hynix HMT325S6CFR8C-PB 2GB vs Crucial Technology BL16G26C16U4W.16FD 16GB

总分

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

总分

Crucial Technology BL16G26C16U4W.16FD 16GB

Crucial Technology BL16G26C16U4W.16FD 16GB

差异规格评论

差异

SK Hynix HMT325S6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325S6CFR8C-PB 2GB

报告一个错误

Crucial Technology BL16G26C16U4W.16FD 16GB

需要考虑的原因
Crucial Technology BL16G26C16U4W.16FD 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 38

左右 -12% 更低的延时
更快的读取速度，GB/s

16.6 10.9

测试中的平均数值
更快的写入速度，GB/s

15.2 6.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6CFR8C-PB 2GB

Crucial Technology BL16G26C16U4W.16FD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 34
读取速度，GB/s

10.9 16.6
写入速度，GB/s

6.6 15.2
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1406 3477

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Micron Technology 16ATF1G64AZ-2G1A2 8GB

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A-DATA Technology DDR3 1866 2OZ 4GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

Golden Empire CL16-16-16 D4-3200 4GB

Golden Empire CL16-16-16 D4-3200 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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G Skill Intl F4-3600C18-8GTZRX 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

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Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB