SK Hynix HMT325S6CFR8C-PB 2GB vs Samsung M393A4K40CB2-CTD 32GB

总分

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

总分

Samsung M393A4K40CB2-CTD 32GB

Samsung M393A4K40CB2-CTD 32GB

差异规格评论

差异

SK Hynix HMT325S6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325S6CFR8C-PB 2GB

报告一个错误

低于PassMark测试中的延时，ns

38 59

左右 36% 更低的延时
更快的读取速度，GB/s

10.9 9.1

测试中的平均数值

Samsung M393A4K40CB2-CTD 32GB

需要考虑的原因
Samsung M393A4K40CB2-CTD 32GB

报告一个错误

更快的写入速度，GB/s

7.2 6.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6CFR8C-PB 2GB

Samsung M393A4K40CB2-CTD 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 59
读取速度，GB/s

10.9 9.1
写入速度，GB/s

6.6 7.2
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1406 2025

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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V-Color Technology Inc. TL8G36818D-E6PRSWK 8GB

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Samsung M393A4K40CB2-CTD 32GB

Samsung M393A4K40CB2-CTD 32GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Chun Well Technology Holding Limited MD4U1632160DCW 16GB

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Micron Technology 36ASF2G72PZ-2G1A2 16GB

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Mushkin 99[2/7/4]192F 4GB

Mushkin 99[2/7/4]192F 4GB

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Corsair CMSX4GX3M1A1600C9 4GB

Kingston 9905625-074.A00G 16GB

Kingston 9905625-074.A00G 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F4-2666C19-8GSXK 8GB

G Skill Intl F4-2666C19-8GSXK 8GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Kingston ACR32D4S2S8ME-16 16GB

Kingston ACR32D4S2S8ME-16 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Kingston HP26D4U9D8HC-16X 16GB

Kingston HP26D4U9D8HC-16X 16GB