SK Hynix HMT325U6BFR8C-H9 2GB vs Crucial Technology BL8G36C16U4WL.M8FE1 8GB

总分

SK Hynix HMT325U6BFR8C-H9 2GB

SK Hynix HMT325U6BFR8C-H9 2GB

总分

Crucial Technology BL8G36C16U4WL.M8FE1 8GB

Crucial Technology BL8G36C16U4WL.M8FE1 8GB

差异规格评论

差异

SK Hynix HMT325U6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325U6BFR8C-H9 2GB

报告一个错误

Crucial Technology BL8G36C16U4WL.M8FE1 8GB

需要考虑的原因
Crucial Technology BL8G36C16U4WL.M8FE1 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 39

左右 -26% 更低的延时
更快的读取速度，GB/s

19.1 12.8

测试中的平均数值
更快的写入速度，GB/s

15.6 7.7

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325U6BFR8C-H9 2GB

Crucial Technology BL8G36C16U4WL.M8FE1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 31
读取速度，GB/s

12.8 19.1
写入速度，GB/s

7.7 15.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1775 3553

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M393B1K70CH0-CH9 8GB

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Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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G Skill Intl F4-2666C15-16GVK 16GB

G Skill Intl F4-2666C15-16GVK 16GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Corsair CMK32GX4M4K4333C19 8GB

Corsair CMK32GX4M4K4333C19 8GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

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Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N

Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

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