SK Hynix HMT325U6CFR8C-PB 2GB vs A-DATA Technology AO2P26KC8T1-BC1S 8GB

总分

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

总分

A-DATA Technology AO2P26KC8T1-BC1S 8GB

A-DATA Technology AO2P26KC8T1-BC1S 8GB

差异规格评论

差异

SK Hynix HMT325U6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325U6CFR8C-PB 2GB

报告一个错误

更快的写入速度，GB/s

8.1 7.3

测试中的平均数值

A-DATA Technology AO2P26KC8T1-BC1S 8GB

需要考虑的原因
A-DATA Technology AO2P26KC8T1-BC1S 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 43

左右 -39% 更低的延时
更快的读取速度，GB/s

13.6 12.3

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325U6CFR8C-PB 2GB

A-DATA Technology AO2P26KC8T1-BC1S 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 31
读取速度，GB/s

12.3 13.6
写入速度，GB/s

8.1 7.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1706 2307

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Samsung M471B5273EB0-CK0 4GB

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Team Group Inc. 16GB

Team Group Inc. 16GB

Corsair CM5S16GM4800A40K2 16GB

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UMAX Technology D4-2400-4GB-512X8-L 4GB

Kingston ACR512X64D3S13C9G 4GB

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Samsung V-GeN D4S8GL24A8 8GB

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Kingston KHX318C10FR/8G 8GB

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Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

Samsung M323R2GA3BB0-CQKOD 16GB

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Patriot Memory (PDP Systems) 4133 C19 Series 8GB

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