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SK Hynix HMT325U6CFR8C-PB 2GB
Avant Technology W6451U67J5213NB 4GB

SK Hynix HMT325U6CFR8C-PB 2GB vs Avant Technology W6451U67J5213NB 4GB

总分
star star star star star
SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

总分
star star star star star
Avant Technology W6451U67J5213NB 4GB

Avant Technology W6451U67J5213NB 4GB

差异 规格 评论

差异

SK Hynix HMT325U6CFR8C-PB 2GB 需要考虑的原因
SK Hynix HMT325U6CFR8C-PB 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    43 left arrow 76
    左右 43% 更低的延时
  • 更快的写入速度，GB/s
    8.1 left arrow 7.7
    测试中的平均数值
Avant Technology W6451U67J5213NB 4GB 需要考虑的原因
Avant Technology W6451U67J5213NB 4GB
报告一个错误
  • 更快的读取速度，GB/s
    14.4 left arrow 12.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT325U6CFR8C-PB 2GB
Avant Technology W6451U67J5213NB 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 76
  • 读取速度，GB/s
    12.3 left arrow 14.4
  • 写入速度，GB/s
    8.1 left arrow 7.7
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1706 left arrow 1718

SK Hynix HMT325U6CFR8C-PB 2GB RAM的比较

OCZ OCZ3G1600LV2G 2GB
OCZ OCZ3G16002G 2GB

Avant Technology W6451U67J5213NB 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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