SK Hynix HMT325U6CFR8C-PB 2GB vs Corsair CMK16GX4M1B3000C15 16GB

总分

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

总分

Corsair CMK16GX4M1B3000C15 16GB

Corsair CMK16GX4M1B3000C15 16GB

差异规格评论

差异

SK Hynix HMT325U6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325U6CFR8C-PB 2GB

报告一个错误

Corsair CMK16GX4M1B3000C15 16GB

需要考虑的原因
Corsair CMK16GX4M1B3000C15 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 43

左右 -48% 更低的延时
更快的读取速度，GB/s

17.1 12.3

测试中的平均数值
更快的写入速度，GB/s

13.0 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325U6CFR8C-PB 2GB

Corsair CMK16GX4M1B3000C15 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 29
读取速度，GB/s

12.3 17.1
写入速度，GB/s

8.1 13.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1706 3366

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung V-GeN D4S4GL32A8TL 4GB

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Kingston KVR16N11/8-SP 8GB

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INTENSO 5641152 4GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Kingston 99U5403-468.A00LF 8GB

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Apacer Technology D12.2356WS.001 8GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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Corsair CMK16GX4M1B3000C15 16GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Kingston 9905293-040.A00LF 1GB

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Crucial Technology CT8G4DFD8213.C16FHP 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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PUSKILL DDR3 1600 8G 8GB

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Crucial Technology BLS8G4D26BFSCK.8FD 8GB

Crucial Technology BLS8G4D26BFSCK.8FD 8GB

Kingston 9905471-006.A01LF 4GB

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Crucial Technology CT16G4SFRA266.C8FB 16GB

Crucial Technology CT16G4SFRA266.C8FB 16GB

Crucial Technology CB8GS2400.C8D 8GB

Crucial Technology CB8GS2400.C8D 8GB

Crucial Technology CT8G4SFS824A.C8FE 8GB

Crucial Technology CT8G4SFS824A.C8FE 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Kingston KV0M5R-MIE 8GB

Kingston KV0M5R-MIE 8GB