SK Hynix HMT325U6CFR8C-PB 2GB vs InnoDisk Corporation M4S0-AGS1O5IK 16GB

总分

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

总分

InnoDisk Corporation M4S0-AGS1O5IK 16GB

InnoDisk Corporation M4S0-AGS1O5IK 16GB

差异规格评论

差异

SK Hynix HMT325U6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325U6CFR8C-PB 2GB

报告一个错误

InnoDisk Corporation M4S0-AGS1O5IK 16GB

需要考虑的原因
InnoDisk Corporation M4S0-AGS1O5IK 16GB

报告一个错误

低于PassMark测试中的延时，ns

42 43

左右 -2% 更低的延时
更快的读取速度，GB/s

13.1 12.3

测试中的平均数值
更快的写入速度，GB/s

11.5 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325U6CFR8C-PB 2GB

InnoDisk Corporation M4S0-AGS1O5IK 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 42
读取速度，GB/s

12.3 13.1
写入速度，GB/s

8.1 11.5
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1706 2525

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3600C18-16GVK 16GB

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Crucial Technology CT25664BA160B.C16F 2GB

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Kingston KHX4800C19D4/8GX 8GB

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Crucial Technology CT102464BA160B.M16 8GB

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UMAX Technology D4-3200-16G-1024X8-L 16GB

Samsung M393B1G70BH0-CK0 8GB

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G Skill Intl F4-3200C16-16GVK 16GB

G Skill Intl F4-3200C16-16GVK 16GB

Kingston 9965516-430.A00G 16GB

Kingston 9965516-430.A00G 16GB

Micron Technology 16ATF4G64AZ-3G2E1 32GB

Micron Technology 16ATF4G64AZ-3G2E1 32GB

Samsung M393B5170EH1-CH9 4GB

Samsung M393B5170EH1-CH9 4GB

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Kingston KHX1600C9S3L/4G 4GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB