SK Hynix HMT325U6CFR8C-PB 2GB vs Kingston 99U5713-003.A00G 4GB

总分

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

总分

Kingston 99U5713-003.A00G 4GB

Kingston 99U5713-003.A00G 4GB

差异规格评论

差异

SK Hynix HMT325U6CFR8C-PB 2GB

需要考虑的原因
SK Hynix HMT325U6CFR8C-PB 2GB

报告一个错误

低于PassMark测试中的延时，ns

43 77

左右 44% 更低的延时
更快的写入速度，GB/s

8.1 5.6

测试中的平均数值

Kingston 99U5713-003.A00G 4GB

需要考虑的原因
Kingston 99U5713-003.A00G 4GB

报告一个错误

更快的读取速度，GB/s

13.6 12.3

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325U6CFR8C-PB 2GB

Kingston 99U5713-003.A00G 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 77
读取速度，GB/s

12.3 13.6
写入速度，GB/s

8.1 5.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1706 1267

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M393B1K70CH0-CH9 8GB

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Samsung M471A5644EB0-CPB 2GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Corsair CM4X8GF2133C15S2 8GB

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UMAX Technology D4-2400-4GB-512X8-L 4GB

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Kingston KHX1600C9D3/8G 8GB

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Team Group Inc. UD5-6400 16GB

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Crucial Technology CT8G4SFD824A.C16FF 8GB

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AMD R5S38G1601U2S 8GB

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ISD Technology Limited KD48GU880-32A160X 8GB

ISD Technology Limited KD48GU880-32A160X 8GB

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Gloway International (HK) STK2400CL17SNB16GB 16GB

Gloway International (HK) STK2400CL17SNB16GB 16GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

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G Skill Intl F4-3200C16-16GTZKO 16GB

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Samsung M378B5173BH0-CH9 4GB

Corsair CM4X16GE2666C16K8 16GB

Corsair CM4X16GE2666C16K8 16GB