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SK Hynix HMT325U6CFR8C-PB 2GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB

SK Hynix HMT325U6CFR8C-PB 2GB vs Micron Technology 16ATF2G64HZ-2G1B1 16GB

总分
star star star star star
SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

总分
star star star star star
Micron Technology 16ATF2G64HZ-2G1B1 16GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

差异 规格 评论

差异

SK Hynix HMT325U6CFR8C-PB 2GB 需要考虑的原因
SK Hynix HMT325U6CFR8C-PB 2GB
报告一个错误
Micron Technology 16ATF2G64HZ-2G1B1 16GB 需要考虑的原因
Micron Technology 16ATF2G64HZ-2G1B1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 43
    左右 -19% 更低的延时
  • 更快的读取速度，GB/s
    13.9 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.1 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT325U6CFR8C-PB 2GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 36
  • 读取速度，GB/s
    12.3 left arrow 13.9
  • 写入速度，GB/s
    8.1 left arrow 10.1
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1706 left arrow 2581

SK Hynix HMT325U6CFR8C-PB 2GB RAM的比较

OCZ OCZ3G1600LV2G 2GB
OCZ OCZ3G16002G 2GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB
内存RAM
Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB
V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
Crucial Technology CT16G4SFRA266.M8FB 16GB
Crucial Technology CT16G4SFRA266.M8FB 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
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Corsair CMK16GX4M4B3866C18 4GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Kingston KF2933C17S4/32G 32GB
Kingston KF2933C17S4/32G 32GB
内存RAM
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
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Crucial Technology BLE4G4D32AEEA.K8FE 4GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
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Team Group Inc. TEAMGROUP-SD4-3200 16GB
内存RAM
Corsair CML16GX3M2A1600C10 8GB
Corsair CML16GX3M2A1600C10 8GB
V-Color Technology Inc. TD8G16C16-UHK 8GB
V-Color Technology Inc. TD8G16C16-UHK 8GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
V-Color Technology Inc. TA48G32S816SK 8GB
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内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
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G Skill Intl F4-3600C19-8GVSB 8GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Samsung M386A2G40DB0-CPB 16GB
Samsung M386A2G40DB0-CPB 16GB
内存RAM