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SK Hynix HMT325U6CFR8C-PB 2GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
比较
SK Hynix HMT325U6CFR8C-PB 2GB vs Patriot Memory (PDP Systems) 4000 C19 Series 8GB
总分
SK Hynix HMT325U6CFR8C-PB 2GB
总分
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMT325U6CFR8C-PB 2GB
报告一个错误
需要考虑的原因
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
报告一个错误
低于PassMark测试中的延时,ns
26
43
左右 -65% 更低的延时
更快的读取速度,GB/s
19.7
12.3
测试中的平均数值
更快的写入速度,GB/s
17.0
8.1
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
SK Hynix HMT325U6CFR8C-PB 2GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
43
26
读取速度,GB/s
12.3
19.7
写入速度,GB/s
8.1
17.0
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1706
3842
SK Hynix HMT325U6CFR8C-PB 2GB RAM的比较
OCZ OCZ3G1600LV2G 2GB
OCZ OCZ3G16002G 2GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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PUSKILL DDR3 1600 8G 8GB
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A-DATA Technology DQVE1908 512MB
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Samsung M393B1K70QB0-YK0 8GB
A-DATA Technology AD5U48008G-B 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Avant Technology J642GU42J2320NQ 16GB
A-DATA Technology DQKD1A08 1GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
Kingston 99U5474-013.A00LF 2GB
G Skill Intl F4-4266C17-16GVKB 16GB
Samsung M393B2G70BH0-CH9 16GB
Kingston 9905643-009.A00G 8GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology BL8G36C16U4BL.M8FE1 8GB
AMD R5S38G1601U2S 8GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Solarflare Communications CT16G4DFD824A.C16FBR 16GB
Samsung M393B1G70BH0-CK0 8GB
SK Hynix HMA81GU6CJR8N-UH 8GB
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